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BUW57 Dataheets PDF



Part Number BUW57
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BUW57 DatasheetBUW57 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 18A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector.

  BUW57   BUW57


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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 18A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 150 V 125 V 7 V 20 A 25 A 4 A 6 A 120 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W BUW57 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 18A; IB= 1.8A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 18A; IB= 1.8A VCB= 150V; IE= 0 VCB= 150V; IE= 0;TC=125℃ VEB= 7V; IC= 0 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V Switching times ton Turn-on Time ts Storage Time tf Fall Time IC= 15A; IB1= -IB2= 1.5A; VCC= 60V; tp= 10μs BUW57 MIN TYP. MAX UNIT 125 V 1.5 V 1.7 V 1.0 10 mA 5.0 mA 15 MHz 1.0 μs 1.5 μs 0.5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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