BUW58

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 160 V 7 V 20 A 25 A 4 A 6 A 120 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W BUW58 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector -Base Cutoff Current IEBO Emitter Cutoff Current IC= 15A; IB= 1.5A VCB= 300V; IE= 0 VCB= 300V; IE= 0;TC=100℃ VEB= 7V; IC= 0 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V Switching times ton Turn-on ...