isc Silicon NPN Power Transistor
BUW72
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min.) ·Low C...
isc Silicon
NPN Power
Transistor
BUW72
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max.) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
450
V
400
V
7
V
10
A
3
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
BUW72
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
0.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 4A; VCE= 5V
15
Switching times
ton
Turn-on Time
2.0 μs
ts
Storage Time
IC= 5A; IB1=...