22-26GHz High Power Amplifier
CHA5093
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage ...
Description
CHA5093
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
Performances : 22-26GHz 29dBm output power 20 dB ± 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Gain & RLoss (dB)
25 20 15 10 5 0 -5 S22 -10 -15 S11 -20 -25
15 20 25 Frequency
Typical on Wafer Measurements
Symbol Fop G P1dB Id
Parameter Operating frequency range
Small signal gain Output power at 1dB gain compression
Bias current
Min Typ Max Unit
22 26 GHz
18 20
dB
28 29
dBm
...
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