24.5-26.5GHz High Power Amplifier
CHA5295
24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5295 is a high gain three-sta...
Description
CHA5295
24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Vd1 Vd2 Vg1 Vg2 Vd2
Vg3 Vd3 Vg3 Vd3
Main Features
■ Performances : 24.5-26.5GHz ■ 30dBm output power @ 1dB comp. ■ 17 dB ± 1dB gain ■ DC power consumption, 800mA @ 6V ■ Chip size : 4.01 x 2.52 x 0.05 mm
32 30 28 26 24 22 20 18 16 14 12 10
24
P-1dB (dBm)
Linear Gain (dB)
PAE (%)
24,5 25 25,5 26 Frequency (GHz)
Typical on jig Measurements
26,5
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal ...
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