37-40GHz High Power Amplifier
CHA5297
37-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5297 is a three-stage monolithic ...
Description
CHA5297
37-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Vd1 Vd2 Vg3 Vd3
IN OUT
Vg1 Vg2 Vd2
Vg3 Vd3
Main Features
■ Performances : 37-40GHz ■ 28dBm output power @ 1dB comp. gain ■ 10 dB ± 1dB gain ■ DC power consumption, 1.6A @ 3.5V ■ Chip size : 4.16 x 2.6 x 0.05 mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB
Output power at 1dB gain compression
Id Bias current
Min Typ Max Unit
37 40 GHz 10 dB 28 dBm 1.6 A
ESD Protection : Electrostatic discha...
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