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MTA020N01S3

Cystech Electonics

14V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9 14V N-Channel Enha...


Cystech Electonics

MTA020N01S3

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CYStech Electronics Corp. Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 1/9 14V N-Channel Enhancement Mode MOSFET MTA020N01S3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=2.3A RDSON@VGS=2.5V, ID=2.3A 14V 2.3A 37mΩ(typ) 46mΩ(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol MTA020N01S3 Outline SOT-323 D G:Gate S:Source D:Drain S G Ordering Information Device MTA020N01S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA020N01S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C073S3 Issued Date : 2016.07.04 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 14 ±8 2.3 1.8 10 0.34 -55~+150 Unit V A W °C Thermal Performance Parameter Symbol Limit Thermal Resistance, Junction-to-Ambient, max (Note3) RθJA 367 Thermal Resistance...




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