N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9
N -Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTA55N20J3
BVDSS ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=11A VGS=4.5V, ID=5A
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating package
200V 25A 52mΩ 52mΩ
Equivalent Circuit
MTA55N20J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTA55N20J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTA55N20J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS VGS ID ID IDM IAS EAS EAR
Pd
Tj, Tstg
Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. :...
Similar Datasheet