N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTA50N15H8
BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A
Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=10A
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
150V 26A 18.4A 4.6A 3.7A 44mΩ(typ) 43mΩ(typ)
Symbol
MTA50N15H8
G:Gate D:Drain S:Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTA50N15H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTA50N15H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, ID=10...
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