MTA50N15J3

CYStech Electronics Corp. Spec. No. : C957J3 Issued Date : 2016.07.26 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N15J3 BVDSS ID@TC=25°C, VGS=10V 150V 27A RDS(ON)@VGS=10V, ID=15A 44.3 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 43.0 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Symbol MTA50N15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTA50N15J3-0-T3-X Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTA50N15J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C957J3 Issued Date : 2016.07.26 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current @L=0.1mH Single Pulse Avalanche Energy @ L=1mH, ID=13 Amps, VDD=50V TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature *Drain current limited by maximum junction ...