N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 1/9
N-Channel Logic Le...
Description
CYStech Electronics Corp.
Spec. No. : C131V8 Issued Date : 2015.12.14 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTA7D0N01AV8 BVDSS ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
VGS=10V, ID=11A
RDSON(TYP) VGS=4.5V, ID=8A
Features
VGS=3V, ID=5A
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package
16V 28A 12.5A 5.9mΩ 6.9mΩ 8.4mΩ
Equivalent Circuit
MTA7D0N01AV8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device
Package
Shipping
MTA7D0N01AV8-0-T6-G
DFN3×3 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA7D0N01AV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω
TC=25℃
Total Power Dissipation
TC=100℃ TA=25℃
TA=70℃
Symbol VDS VGS ID
IDSM
IDM IAS EAS PD
PDSM
Operating Junction and Storage Temperature Range...
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