MTB020N03KJ3

CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB020N03KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=10A Features VGS=4V, ID=10A  Low Gate Charge  Simple Drive Requirement  ESD Protected Gate  Pb-free lead plating and halogen-free package 30V 30A 9A 13mΩ 18mΩ 21mΩ Equivalent Circuit MTB020N03KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB020N03KJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB020N03KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 2/9 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V Continuous Drain Current @TC=100C, VGS=10V Continuous Drain Current @TA=25C, VGS=10V Continuous Drain Current @TA=100C, VGS=10V Pulsed Drain Current @ VGS=10V Single Pulse Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @ L=5mH, ID=6A, VDD=15V TC=25C Power Dissipation TC=100C TA=25C TA=100C Operating ...