MTB020N03E3

CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB020N03E3 BVDSS ID@VGS=10V, TC=25°C Features RDS(ON)@VGS=10V, ID=20A Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N03E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB020N03E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=125°C ID Pulsed Drain Current (Note 1) IDM Avalanche Current @L=0.5mH IAS Avalanche Energy @ L=5mH, ID=6A, VDD=30V (Note 2) EAS Repetitive Avalanche Energy@ L=0.05mH EAR Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) PD Total Power Dissipation (TA=...