MTB050P10E3

CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB050P10E3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -40A 46mΩ 52mΩ Features  Low Gate Charge  Simple Drive Requirement  Repetitive Avalanche Rated  Fast Switching Characteristic  RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB050P10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB050P10E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=-10V Continuous Drain Current @ TC=100C, VGS=-10V Pulsed Drain Current Continuous Drain Current @ TA=25C , VGS=10V Continuous Drain Current @ TA=70C , VGS=10V Avalanche Current Avalanche Energy @ L=1mH, ID=-21A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage T...