MTB050P10F3

CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10F3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -40A 46mΩ 52mΩ Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTB050P10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTB050P10F3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050P10F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C975F3 Issued Date : 2014.08.13 Revised Date : 2014.10.02 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Pulsed Drain Current Continuous Drain Current @ TA=25°C , VGS=10V Continuous Drain Current @ TA=70°C , VGS=10V Avalanche Current Avalanche Energy @ L=1mH, ID=-21A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Op...