N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 1/8
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 1/8
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB05N03HQ8 BVDSS ID RDSON(max)
30V 20A 5mΩ
Description
The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated UIS, Rg 100% tested Pb-free Lead Plating and Halogen-free Package
Symbol
MTB05N03HQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
MTB05N03HQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 2/8
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25℃ TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Limits
30 ±20 20 13 80 *1 20 20 10...
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