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MTB05N03HQ8

Cystech Electonics

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 1/8 N-Chann...


Cystech Electonics

MTB05N03HQ8

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CYStech Electronics Corp. Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET MTB05N03HQ8 BVDSS ID RDSON(max) 30V 20A 5mΩ Description The MTB05N03HQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated UIS, Rg 100% tested Pb-free Lead Plating and Halogen-free Package Symbol MTB05N03HQ8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source MTB05N03HQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C738Q8 Issued Date : 2009.08.19 Revised Date : 2011.10.03 Page No. : 2/8 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation TA=25℃ TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits 30 ±20 20 13 80 *1 20 20 10...




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