MTB080P06L3

CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-2A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080P06L3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25°C Continuous Drain Current @ VGS=-10V, TA=70°C Pulsed Drain Current *1 Single Pulse Avalanche Current Avalanche Energy @ L=6mH, ID=-4A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Spec. No. : C069L3 Issued Date : 20...