MTB080P06N6

CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.7A -60V -3.8A -3.0A 79mΩ 107mΩ Features Simple drive requirement Low on-resistance Small package outline Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits -60 ±20 -3.8 -3.0 -3.0 -2.4 -40 3.1 2.0 2.0 1.25 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Thermal Resistance, Junction-to-case, max Rth,j-c 40 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62.5 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% Unit °C/W MTB080P06N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date :...