N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTD011N10RH8
Features
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
VGS=10V, ID=11.5A RDSON(TYP)
VGS=4.5V, ID=9.5A
100V 45A 13.8A 9.2mΩ 12.8mΩ
Single Drive Requirement Low On-resistance Fast Switc...
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