MTD06N04Q8

CYStech Electronics Corp. Spec. No. : C892Q8 Issued Date : 2013.01.28 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTD06N04Q8 BVDSS ID RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 40V 15A 6mΩ 10mΩ Description The MTD06N04Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Symbol MTD06N04Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTD06N04Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=15A, VGS=10V, VDD=25V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation *3 TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Spec. No. : C892Q8 Issued Date : 2013.01.28 Revised Date : Page No. : 2/9 Limits 40 ±20 15 12 140 *1 15 113 0.5 *2 3.1 2 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 20 °C/W Thermal Resistance, Junction-to-ambient,...