N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTD07N04E3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A
40V 58A
13.4A 5.1 mΩ(typ) 6.6 mΩ(typ)
Symbol
MTD07N04E3
Outline
TO-220
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTD07N04E3-0-UB-X
Package
TO-220 (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTD07N04E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 1)
Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=0.1mH, ID=51 Amps, VDD=25V
(Note 4)
Repetiti...
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