MTD07N04E3

CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTD07N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTD07N04E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy @ L=0.1mH, ID=51 Amps, VDD=25V (Note 4) Repetiti...