N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD07N04Q8
Spec. No. : C140Q8 Issued Date : 2016.01.2...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD07N04Q8
Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 1/9
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free & Halogen-free package
BVDSS ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=11A
RDS(ON)@VGS=4.5V, ID=8A
40V 16A 6.4 mΩ(typ) 9.4 mΩ(typ)
Symbol
MTD07N04Q8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device MTD07N04Q8-0-T3-G
Package
Shipping
SOP-8 (RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD07N04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=16A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C TA=70 °C
VDS VGS
ID
IDM IAS EAS EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temp...
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