MTE010N10E3

CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 100V 70A 9.6mΩ 10.1mΩ Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE010N10E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C(silicon limit) Continuous Drain Current @ TC=100°C(silicon limit) Continuous Drain Current @ TC=25°C(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=100μH, ID=80A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA...