N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE010N10FP BVDSS ID @ VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V 35A 9.9mΩ 10.5mΩ
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package
Symbol
MTE010N10FP
Outline
TO-220FP
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE010N10FP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE010N10FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Avalanche Current
Avalanche Energy @ L=500μH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C TC=100°C
Power Dissipation
TA=2...
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