MTE010N10FP

CYStech Electronics Corp. Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE010N10FP BVDSS ID @ VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 35A 9.9mΩ 10.5mΩ Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Symbol MTE010N10FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE010N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE010N10FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Avalanche Current Avalanche Energy @ L=500μH, ID=30A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH Power Dissipation TC=25°C TC=100°C Power Dissipation TA=2...