MTE013N08H8

CYStech Electronics Corp. Spec. No. : C161H8 Issued Date : 2016.03.04 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTE013N08H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 80V 40A 10.5A 9.1 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol MTE013N08H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTE013N08H8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE013N08H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C161H8 Issued Date : 2016.03.04 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 4) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 4) Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current (Note 1) Single Pulse Avalanche Current @ L=0.1mH Single Pulse Avalanche Energy @ L=5mH, ID=20 Amps, ...