D1554 Transistors Datasheet

D1554 Datasheet, PDF, Equivalent


Part Number

D1554

Description

Silicon NPN Power Transistors

Manufacture

Savantic

Total Page 3 Pages
Datasheet
Download D1554 Datasheet


D1554
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1554
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mP(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
3.5
1
40
150
-55~150
UNIT
V
V
V
A
A
W

D1554
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=0.2A , IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.8A
ICBO Collector cut-off current
VCB=500V; IE=0
hFE DC current gain
fT Transition frequency
COB Collector output capacitance
VF Diode forward voltage
tf Fall time
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=3.5A
ICP=3A ;IB1(end)=0.8A
Product Specification
2SD1554
MIN TYP. MAX UNIT
5V
5.0 8.0
V
1.5 V
10 µA
8
3 MHz
95 pF
2.0 V
0.5 1.0 µs
2


Features SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 1554 DESCRIPTION www.dat·aWshiethet4T uO.co-3mP(H)IS package ·Built-in dampe r diode ·High voltage ,high speed ·Lo w collector saturation voltage APPLICA TIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRI PTION Base Collector Emitter Fig.1 sim plified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SY MBOL PARAMETER VCBO VCEO VEBO IC IB P C Tj Tstg Collector-base voltage Colle ctor-emitter voltage Emitter-base volta ge Collector current Base current Colle ctor power dissipation Junction tempera ture Storage temperature CONDITIONS Op en emitter Open base Open collector TC= 25 VALUE 1500 600 5 3.5 1 40 150 -55~1 50 UNIT V V V A A W SavantIC Semicond uctor Silicon NPN Power Transistors CH ARACTERISTICS Tj=25 unless otherwise s pecified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter -base breakdown voltage IE=0.2A , IC=0 VCEsat Collector-emitter sa.
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