SiC08A065NS

SiC08A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 8A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-252AA  Marking: 08A065NS Benefits  High Frequency Operation  Higher System Efficiency  Environmental Protection  Parallel Device Convenience  Hard Switching & High Reliability  High Temperature Application TO-252AA Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave, D=0.1) SYMBOL VRRM VRSM VR IF(AV) IFRM TEST CONDITIONS TJ=25oC TJ=25oC TJ=25oC TC=25oC TC=125oC TC=150oC TC=25oC TC=125oC VALUE 650 650 650 21 10 8 47 39 UNITS V V V A A A A A June 13,2016-REV.00 Page 1 SiC08A065NS Maximum Ratings PARAMETER Non-Repetitive Peak Forward Surge Current (TP=10mS, Half Sine Wave) Non-Repetitive Peak Forward Surge Current (TP=10uS, Pulse) Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance Junction to Case SYMBOL IFSM TEST CONDITIONS TC=25oC TC=125oC TC=25oC PD TJ TSTG RθJC TC=25oC TC=125oC VALUE 62 54 250 71 24 175 -55 to 175 2.1 UNITS A A A W W oC oC oC/W Electrical Characteristics PARAMETER DC Blacking Voltage Forward Voltage Reverse Current Total Capacit...