Power MOSFETs
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
V...
Description
HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
VDSS I
D25
RDS(on)
= 800 V = 9A = 1.1 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM I
D25
I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
V GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T C
= 25°C
T C
= 25°C,
pulse width limited by TJM
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V DD
≤
V, DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque TO-247 TO-268
Maximum Ratings
800 V 800 V ±20 V ±30 V
9A 36 A
9A 20 mJ 700 mJ
5 V/ns
180 -55 ... +150
150 -55 ... +150
300
1.13/10 6 4
W
°C °C °C °C
Nm/lb.in.
g g
Test Conditions
VGS = 0 V, ID = 1 mA V = V , I = 2.5 mA
DS GS D
VGS = ±20 VDC, VDS = 0
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. 800 V
3.0 5.0 V
±100 nA
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l IXYS advanced low Q process g
l Low gate charge and capacitances - easier to drive - faster switching
l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS)
rated l Molding epoxies meet UL 94 V-0
flammability classification
VDS = 0.8 VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
50 µA 1 mA
1.1 Ω
Advantages
l Easy to mount l Space sav...
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