B1571

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR FEATURES Low VCE(sat): VCE(sat)1 ≤ −0.35 V Complementary to 2SD2402 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) Collector Current (pulse) Note1 IC(DC) IC(pulse) −5.0 −8.0 Base Current (DC) Base Current (pulse) Note1 Total Power Dissipation Note2 IB(DC) IB(pulse) PT −0.2 −0.4 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 16 cm2 x 0.7 mm V V V A A A A W °C °C PACKAGE DRAWING (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 0.8 MIN. 2.5±0.1 4.0±0.25 C EB 0.42 ±0.06 1.5 0.47 ±0.06 3.0 0.42 ±0.06 E: Emitter C: Collector (Fin) B: Base 0.41 +0.03 –0.05 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Collector Cut-off Current ICBO VCB = −50 V, IE = 0 Emitter Cut-off Current DC Current Gain Note IEBO VEB = −6.0 V, IC = 0 hFE1 VCE = −1.0 V, IC = −1.0 A Base to Emitter Voltage Note Collector Saturation Voltage Note Collector Saturation Voltage Note Base Saturation Voltage Note hFE2 VBE VCE(sat)1 VCE(sat)2 VBE(sat) VCE = −1.0 V, IC = −2.0 A VCE = −1.0 V, IC = −0.1 A IC = −3.0 A, IB = −0.15 A IC = −5.0 A, IB = −0.25 A IC = −3.0 A, IB = −0.15 A Gain Bandwidth Product fT VCE = −10 V, IE = 0.5 A Output Capacitance ...