DATA SHEET
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
DATA SHEET
SILICON
TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers.
FEATURES High current capacitance Low collector saturation voltage
QUALITY GRADES Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
Electrode connection 1: Emitter 2: Collector (fin) 3: Base
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse)
Base current (DC) Base current (pulse)
Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
IB(DC) IB(pulse)
PT Tj Tstg
Conditions
PW ≤ 10 ms Duty cycle ≤ 50 % PW ≤ 10 ms Duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board used
Ratings −20 −16 −6.0 −3.0 −5.0
−0.2 −0.4
2.0 150 −55 to +150
Unit V V V A A
A A
W °C °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16148EJ1V0DS00 (1...