DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ673 is P-channel MOS...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ673
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ673 is P-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
Low Ciss: Ciss = 4600 pF TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SJ673
PACKAGE Isolated TO-220 (MP-45F)
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C)
VDSS VGSS ID(DC) ID(pulse) PT1
−60
m20 m36 m144 32
Total Power Dissipation (TA = 25°C)
PT2
2.0
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg −55 to +150 IAS −36 EAS 130
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = 20 → 0 V
V V A A W W °C °C A mJ
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17210EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan
2004
2SJ673
ELECTRICA...