2SJ673

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A) Low Ciss: Ciss = 4600 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SJ673 PACKAGE Isolated TO-220 (MP-45F) (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VDSS VGSS ID(DC) ID(pulse) PT1 −60 m20 m36 m144 32 Total Power Dissipation (TA = 25°C) PT2 2.0 Channel Temperature Tch 150 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg −55 to +150 IAS −36 EAS 130 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17210EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan 2004 2SJ673 ELECTRICA...