2SA1012

2SA1012(PNP) TO-220 Transistor 1. BASE 2. COLLECTOTR 3. EMITTER TO-220 Features 3 2 1 — HIGH CURRENT SWITCHING APPLICATIONS. — Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A — High Speed Swithing Time : tstg = 1.0us (Typ.) — Complementary to 2SC2562 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range -60 -50 -5 -5 2 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC =-1mA, IE=0 IC =-1mA, IB=0 IE=-100μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 -60 -50 -5 V V V -1 μA -1 μA DC current gain hFE(1) VCE=-1V, IC=-1A 70 240 Collector-emitter saturation voltage hFE(2) * VCE(sat) * VCE=-1V, IC=-3A IC=-3A, IB=150mA 30 -0.2 -0.4 V Base-emitter saturation voltage VBE(SAT) IC=-3A, IB=150mA -0.9 -1.2 V Transition frequency Collector output capacitance fT VCE=-4V, IC=-1A Cob VCB=-10V, IE=0, f=1MHz 60 170 MHz pF Switching time Turn-on Time Storage Time Fall Time *Pulse test: tp≤300μS, δ≤0.02. ...