2SD2908
Low VCE(sat) transistor(80V,0.7A)
Features • Low VCE(sat). • Excellent DC current gain characteristics. • Comple...
2SD2908
Low VCE(sat)
transistor(80V,0.7A)
Features Low VCE(sat). Excellent DC current gain characteristics. Complements the 2SB1386 RoHS compliant package Packing & Order Information 3,000/Reel
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Publication Order Number: [2SD2908]
© Bruckewell Technology Corporation Rev. A -2014
2SD2908
Low VCE(sat)
transistor(80V,0.7A)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Value 50 20 6 5 500
-55 to +150
Unit V V V A
mW °C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = 50μA , IE = 0
V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA , IB = 0
V(BR)EBO ICBO IEBO hFE VCE(sat)
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage
IE = 50μA , IC = 0 VCB = 40 V , IE = 0 VEB = 5 V , IC = 0 VCE = 2 V , IC = 0.5 A IC = 4 A , IB = 0.1 A
fT Transition frequency
VCE = 6 V , IC = 50 mA f = 100MHz
Cob Collector output capacitance
VCB = 20 V , IE = 0 f = 1.0MHz
MIN 50 20 6
120
TYP
0.25 150
MAX
0.5 0.5 390 1.0
UNIT V V V μA μA
V
MHz
30 pF
CLASSIFICATION OF hFE Marking Rank
Range
AHQ Q
120-270
AHR R
180-390
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