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DB157S Dataheets PDF



Part Number DB157S
Manufacturers LGE
Logo LGE
Description Silicon Bridge Rectifiers
Datasheet DB157S DatasheetDB157S Datasheet (PDF)

DB151S-DB157S Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A 0.3 Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak Glass passivated chip junctions Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams 1.

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DB151S-DB157S Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A 0.3 Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak Glass passivated chip junctions Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, solderde plated Plastic material has UL flammability classification 94V-O Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams 1± 0.1 8.3± 0.1 5± 0.2 6.3± 0.2 8.3± 0.3 DB-S 7.9± 0.2 6.4± 0.1 1.2± 0.3 10± 0.6 3.2± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. DB 151S DB 152S DB 153S DB 154S DB 155S DB 156S DB 157S UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA=25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.5 A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Operating junction temperature range Storage temperature range VRRM VRMS VDC IF(AV) 50 35 50 100 200 400 600 800 1000 70 140 280 420 560 700 100 200 400 600 800 1000 1.5 V V V A IFSM 40 A VF IR TJ TSTG 1.1 10.0 1.0 - 55 ---- + 150 - 55 ---- + 150 V μA mA http://www.luguang.cn mail:[email protected] PEAK FORWARD SURGE CURRENT, AMPERSE AVERAGE FORWARD OUTPUT CURRENT, AMPERSE DB151S-DB157S Silicon Bridge Rectifiers Ratings AND Charactieristic Curves FIG.2 -- MAXIMUM NON-REPETITIVE FORWARD SURGE FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE VVVVVVVCURRENT 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 60 50 40 8.3ms Single Half Sine Wave TJ=25 30 20 10 0 1 5 10 5 0 1 00 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD CURRENT, AMPERSE FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 10 1 .0 0 .1 T J= 1 2 5 P ulse W idth =300uS .0 1 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUSFORWARDVOLTAGE, VOLTS http://www.luguang.cn INSTANTANEOUS REVERSE CURRENT, MICRO AMPERSE FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 100 10 1.0 TJ=25 0.1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% mail:[email protected] .


DB156S DB157S DTA124EE


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