Bias Resistor Transistor PNP Silicon
P b Lead(Pb)-Free
1 BASE
R1 R2
DTA114EE Series
COLLECTOR 3
2 EMITTER
1 2
33
SC-89 (SOT-523F)
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
VCEO VCBO
Collector Current-Continuous
IC
Value 50
50
100
Unit V V
mA
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board FR-4 Board(1) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(1)
Total Device Dissipation FR-5 Board FR-4 Board(2) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(2)
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad 2.FR-4 @1.0 x 1.0 Inch pad
Symbol
PD RθJA
PD RθJA TJ Tstg
Max
200 1.6 600
300 2.4 400 -55 to +150 -55 to +150
Unit
mW mW/ ˚C
˚C/W
mW mW/ ˚C
˚C/W ˚C ˚C
Device Marking and ResistorValues
Device
Marking R1(K)
R2(K)
DTA114EE
DTA124EE DTA144EE DTA114YE DTA114TE
DTA143TE
6A
6B 6C 6D 6E 6F
10 10
22 22
47 47 10 47 1.