7A N-Channel MOSFET
AOT7N65/AOTF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N65 & AOTF7N65 have been fabri...
Description
AOT7N65/AOTF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
750V@150℃ 7A < 1.56W
D
G D S
G D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N65
AOTF7N65
Drain-Source Voltage
VDS
650
Gate-Source Voltage
VGS
±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
7
7*
4.4
4.4*
24
3.4
173
347
5
TC=25°C Power Dissipation B Derate above 25oC
PD
192
38.5
1.5
0.3
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT7N65 65 0.5
AOTF7N65 65 --
Maximum Junction-to-Case
RqJC
0.65
3.25
* Drain current limited by maximum junction temperature.
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C...
Similar Datasheet