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2SB1126 Dataheets PDF



Part Number 2SB1126
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet 2SB1126 Datasheet2SB1126 Datasheet (PDF)

2SB1126 / 2SD1626 Ordering number : EN1721B 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • High DC current gain (4000 or greater). • Large current capacity. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage .

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2SB1126 / 2SD1626 Ordering number : EN1721B 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • High DC current gain (4000 or greater). • Large current capacity. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Marking 2SB1126 : BI 2SD1626 : DI Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)8V, IC=0A min Ratings (--)80 (--)50 (--)10 (--)1.5 (--)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Ratings typ max Unit (--)100 nA (--)100 nA Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: 2SB1126_2SD1626/D Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage 2SB1126 / 2SD1626 Symbol Conditions hFE1 hFE2 fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCE=(--)2V, IC=(--)500mA VCE=(--)2V, IC=(--)10mA VCE=(--)10V, IC=(--)50mA IC=(--)500mA, IB=(--)0.5mA IC=(--)500mA, IB=(--)0.5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A Package Dimensions unit : mm (typ) 7007B-004 min 4000 3000 (--)80 (--)50 (--)10 Ratings typ 120 (--)0.9 (--)1.5 max (--)1.5 (--)2.0 Unit MHz V V V V V Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 IC -- VCE --0.0-8-m0.A06mA --0.04mA --0.02mA 2SB1126 IC -- VCE 1.6 1.4 1.2 0.08mA 0.06mA 1.0 0.04mA 0.8 0.6 0.02mA 0.4 2SD1626 IB=0mA --2 --4 --6 --8 --10 --12 Collector-to-Emitter Voltage, VCE -- V ITR08937 0.2 0 IB=0mA 0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR08938 Rev.0 I Page 2 of 4 I www.onsemi.com 2SB1126 / 2SD1626 5 hFE -- IC 5 hFE -- IC 10 10 2SB1126 2SD1626 7 VCE= --2V 7 VCE=2V 55 33 22 DC Current Gain, hFE DC Current Gain, hFE 4 10 7 5 3 --0.01 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A ITR08939 VCE(sat) -- IC 2SB1126 IC / IB=1000 --10 7 5 3 2 4 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A ITR08940 VCE(sat) -- IC 3 2SD1626 2 IC / IB=1000 10 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1.0 7 5 5 7 --0.01 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A ITR08941 VBE(sat) -- IC 2SB1126 IC / IB=1000 --10 7 5 3 2 1.0 7 5 5 7 0.01 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A ITR08942 VBE(sat) -- IC 2SD1626 IC / IB=1000 10 7 5 3 2 Collector Current, IC -- A --1.0 7 5 5 7 --0.01 5 ICP=3A 3 2 IC=1.5A 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A ITR08943 ASO 2SB1126 / 2SD1626 1ms 101m00sms 1.0 7 5 3 2 DC operation 0.1 7 5 3 2 For PNP, minus sign is omitted 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V ITR08946 Collector Dissipation, PC -- W 1.0 7 5 5 7 0.01 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A ITR08944 PC -- Ta 2SB1126 / 2SD1626 Mounted on a ceramic board (250mm No heat sink 2✕0.8mm) 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C ITR08945 Rev.0 I Page 3 of 4 I www.onsemi.com 2SB1126 / 2SD1626 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications.


2SC6102 2SB1126 2SD1626


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