CM1231-02SO

CM1231-02SO 2, 4 and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1231−02SO is specifically designed for next generation deep submicron ASIC protection. These devices are ideal for protecting systems with high data and clock rates and for circuits requiring low capacitive loading such as USB 2.0. The CM1231−02SO incorporates dual stage ESD architecture which offers dramatically higher system level ESD protection compared with traditional single clamp designs. In addition, the CM1231−02SO provides a controlled filter roll−off for even greater spurious EMI suppression and signal integrity. The CM1231−02SO protects against ESD pulses up to ±12 kV contact on the “OUT” pins per the IEC 61000−4−2 standard. The device also features easily routed “pass−through” differential pinouts in a 6−lead SOT23 package. Features Two Channels of ESD Protection Exceeds ESD Protection to IEC61000−4−2 Level 4: ±12 kV Contact Discharge (OUT Pins) Two−Stage Matched Clamp Architecture Matching−of−Series Resistor (R) of ±10 mW Typical Flow−Through Routing for High−Speed Signal Integrity Differential Channel Input Capacitance Matching of 0.02 pF Typical Improved Powered ASIC Latchup Protection Dramatic Improvement in ESD Protection vs. Best in Class Single−Stage Diode Arrays 40% Reduction in Peak Clamping Voltage 40% Reduction in Peak Residual Current Withstands over 1000 ESD Strikes* Available in a SOT23−6 Package These Devices are Pb−Free and ar...