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KAF-3200

ON Semiconductor

CCD Image Sensor

KAF-3200 2184 (H) x 1472 (V) Full Frame CCD Image Sensor Description The KAF−3200 Image Sensor is a high performance CC...


ON Semiconductor

KAF-3200

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Description
KAF-3200 2184 (H) x 1472 (V) Full Frame CCD Image Sensor Description The KAF−3200 Image Sensor is a high performance CCD (charge−coupled device) with 2184 (H) x 1472 (V) photoactive pixels designed for a wide range of image sensing applications. The sensor incorporates true two−phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD Total Number of Pixels 2184 (H) x 1510 (V) Number of Active Pixels 2184 (H) x 1472 (V) Pixel Size 6.8 mm (H) x 6.8 mm (V) Active Imager Size 14.85 mm (H) x 10.26 mm (V) 18 mm (diag), 4/3” optical format Optical Fill−Factor 100% Saturation Signal Output Sensitivity Readout Noise (1 MHz) Dark Current (25°C, Accumulation Mode) 55,000 electrons 12 mV/e− 7 electrons rms < 7 pA/cm2 Dark Current Doubling Rate 6°C Dynamic Range (Sat Sig / Dark Noise) 78 dB Quantum Efficiency with microlenses 55%, 70%, 80% (Red, Green, Blue) Maximum Data Rate 15 MHz Package CERDIP Package (sidebrazed) Cover Glass Clear or AR coated, 2 sides NOTE: Parameters above are specified at T = 25°C unless otherwise noted. www.onsemi.com Figure 1. KAF−3200 CCD Image Sensor Features True Two Phase Full Fram...




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