DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICA...
DISCONTINUED
NPN SILICON RF
TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF
TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less minimold package
ORDERING INFORMATION
Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A
Quantity 50 pcs (Non reel)
10 kpcs/reel
Supplying Form 8 mm wide embossed taping
Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg
Ratings 15 3.3 1.5 35 115 150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Unit V V V mA
mW C C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15364EJ1V0DS00 (1st edition) Date Published April 2001 NS CP(K)
DISCONTINUED
NE662M16 / 2SC5704
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
...