2SC5704-A

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form 8 mm wide embossed taping Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg Ratings 15 3.3 1.5 35 115 150 65 to +150 Note Mounted on 1.08 cm2  1.0 mm (t) glass epoxy substrate Unit V V V mA mW C C Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. P15364EJ1V0DS00 (1st edition) Date Published April 2001 NS CP(K) DISCONTINUED NE662M16 / 2SC5704 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA ...