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2SC5754 Dataheets PDF



Part Number 2SC5754
Manufacturers CEL
Logo CEL
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5754 Datasheet2SC5754 Datasheet (PDF)

PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin .

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PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K) The mark • shows major revised points. PHASE-OUT NE664M04 / 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg Ratings 13 5.0 1.5 500 735 150 −65 to +150 Unit V V V mA mW °C °C Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB THERMAL RESISTANCE Parameter Junction to Ambient Resistance Symbol Rth j-a1 Rth j-a2 Test Conditions Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB Stand alone device in free air Ratings 170 570 Unit °C/W °C/W 2 Data Sheet PU10008EJ02V0DS PHASE-OUT NE664M04 / 2SC5754 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA Emitter Cut-off Current DC Current Gain IEBO hFE Note 1 VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 100 mA RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 100 mA, f = 0.5 GHz Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 100 mA, f = 2 GHz Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz Maximum Available Power Gain MAG Note3 VCE = 3 V, IC = 100 mA, f = 2 GHz Linear Gain GL VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty Collector Efficiency ηC VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty MIN. − − 40 16 5.0 − − − − − Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 S12 (K – √ (K2 – 1) ) TYP. − − 60 20 6.5 1.0 12.0 12.0 26.0 60 MAX. 1 000 1 000 100 − − 1.5 − − − − Unit nA nA − GHz dB pF dB dB dBm % hFE CLASSIFICATION Rank Marking hFE Value FB R57 40 to 100 Data Sheet PU10008EJ02V0DS 3 NE664M04 / 2SC5754 Total PowerTDissipation Ptot (mW) Reverse Transfer Capacitance Cre (pF) TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) 1 000 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 800 Mounted on Polyimide PCB (38 × 38 mm, t = 0.4 mm) 735 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 f = 1 MHz 1.5 600 400 Stand alone device 220005 in free air 1.0 0.5 CollectorECurrent IC-(mA) OU 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) 1 000 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 100 10 1 0.1 0.01 0.0010.5 1 000 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) 1.0 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V Collector Current IC (mA) 0 12345 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 450 IB : 0.5 mA step 400 7 mA 350 6 mA 300 5 mA 250 4 mA 200 3 mA 150 2 mA 100 1 mA 50 IB = 0.5 mA 0 123456 Collector to Emitter Voltage VCE (V) 100 DCPCurrentHGain hFE AS 10 1 10 100 1 000 Collector Current IC (mA) 4 Data Sheet PU10008EJ02V0DS GainTBandwidth Product fT (GHz) InsertionEPower Gain |S21e|2-(dB)OU Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 25 VCE = 3 V f = 0.5 GHz 20 15 10 5 01 10 100 1 000 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 1 000 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 2.5 GHz 15 10 MSG MAG 5 |S21e|2 0 1 10 100 1 000 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power.


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