Document
PHASE-OUT
DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04
/
2SC5754
JEITA Part No.
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A
Quantity 50 pcs (Non reel)
3 kpcs/reel
Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K)
The mark • shows major revised points.
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NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg
Ratings 13 5.0 1.5 500 735 150
−65 to +150
Unit V V V mA
mW °C °C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter Junction to Ambient Resistance
Symbol Rth j-a1
Rth j-a2
Test Conditions
Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
Stand alone device in free air
Ratings 170
570
Unit °C/W
°C/W
2 Data Sheet PU10008EJ02V0DS
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NE664M04 / 2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current DC Current Gain
IEBO hFE Note 1
VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 100 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 100 mA, f = 0.5 GHz
Insertion Power Gain
⏐S21e⏐2 VCE = 3 V, IC = 100 mA, f = 2 GHz
Reverse Transfer Capacitance
Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note3 VCE = 3 V, IC = 100 mA, f = 2 GHz
Linear Gain
GL VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty
Collector Efficiency
ηC VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty
MIN.
− − 40
16 5.0 − − −
−
−
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded
3. MAG =
S21 S12
(K – √ (K2 – 1) )
TYP.
− − 60
20 6.5 1.0 12.0 12.0
26.0
60
MAX.
1 000 1 000 100
− − 1.5 − −
−
−
Unit
nA nA −
GHz dB pF dB dB
dBm
%
hFE CLASSIFICATION
Rank Marking hFE Value
FB R57 40 to 100
Data Sheet PU10008EJ02V0DS
3
NE664M04 / 2SC5754
Total PowerTDissipation Ptot (mW)
Reverse Transfer Capacitance Cre (pF)
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
1 000
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
800
Mounted on Polyimide PCB (38 × 38 mm, t = 0.4 mm)
735
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
2.0 f = 1 MHz
1.5
600
400 Stand alone device
220005 in free air
1.0 0.5
CollectorECurrent IC-(mA) OU
0 25 50 75 100 125 150 Ambient Temperature TA (˚C)
1 000
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 3 V
100
10
1
0.1
0.01 0.0010.5
1 000
0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V)
1.0
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 3 V
Collector Current IC (mA)
0 12345
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
450 IB : 0.5 mA step
400 7 mA 350 6 mA 300 5 mA 250 4 mA 200 3 mA 150 2 mA 100
1 mA 50
IB = 0.5 mA 0 123456
Collector to Emitter Voltage VCE (V)
100
DCPCurrentHGain hFE AS
10 1 10 100 1 000 Collector Current IC (mA)
4 Data Sheet PU10008EJ02V0DS
GainTBandwidth Product fT (GHz)
InsertionEPower Gain |S21e|2-(dB)OU
Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
25 VCE = 3 V f = 0.5 GHz
20
15
10
5
01 10 100 1 000 Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20 VCE = 3 V f = 1 GHz
MSG
MAG
15
|S21e|2 10
5
0 1 10 100 1 000 Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
20 VCE = 3 V f = 2.5 GHz
15
10 MSG
MAG
5 |S21e|2
0 1 10 100 1 000 Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power.