PHASE-OUT
DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04
/
2SC5754
JEITA Part No.
NPN SILICON RF TRANSISTOR FOR ME...
PHASE-OUT
DATA SHEET
NPN SILICON RF
TRANSISTOR
NE664M04
/
2SC5754
JEITA Part No.
NPN SILICON RF
TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: ηC = 60% UHS0-HV technology (fT = 25 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A
Quantity 50 pcs (Non reel)
3 kpcs/reel
Supplying Form 8 mm wide embossed taping Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K)
The mark shows major revised points.
PHASE-OUT
NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
...