2SC1393

2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER (FORWARD AGC) The transistor is subdivided into three group, R、 O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 30 4 20 250 150 -55 to +150 Unit V V V mA mW ℃ ℃ Page 1 of 2 7/15/2011 Characteristics at Tamb=25℃ Parameter DC Current Gain at VCE=10V, IC=2mA R O Y Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V AGC Current IE at Gpe=-30dB, f=200MHz Reverse Transfer Capacitance at VCB=10V, f=1MHz Current Gain Bandwidth Product at VCE=10V, IC=3mA Power Gain at VCE=10V, f=200MHz, RS=50Ω, IE=-3mA Noise Figure at VCE=10V, IE=-3mA f=200MHz, RS=50Ω Symbol hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IAGC Cre fT Gpe NF Min. 40 60 90 30 30 4 400 20 - Typ. - -10 0.35 700 24 2.0 Max. 80 140 180 0.1 -12 0.5 - Unit - V V V μA mA pF MHz dB 3.0 dB Page 2 of 2 7/15/2011 ...