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KAF-6303 Dataheets PDF



Part Number KAF-6303
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description CCD IMAGE SENSOR
Datasheet KAF-6303 DatasheetKAF-6303 Datasheet (PDF)

KAF-6303 3072 (H) x 2048 (V) Full Frame CCD Image Sensor Description The KAF−6303 Image Sensor is a high performance CCD (charge-coupled device) with 3072 (H) × 2048 (V) photo active pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrod.

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KAF-6303 3072 (H) x 2048 (V) Full Frame CCD Image Sensor Description The KAF−6303 Image Sensor is a high performance CCD (charge-coupled device) with 3072 (H) × 2048 (V) photo active pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD Total Number of Pixels 3088 (H) × 2056 (V) Number of Active Pixels 3072 (H) × 2048 (V) = approx. 6.3 Mp Pixel Size 9 mm (H) × 9 mm (V) Active Image Size 27.65 mm (H) × 18.48 mm (V) 33.4 mm (Diagonal) APS−H Optical Format Chip Size Saturation Signal Output Sensitivity 29.0 mm (H) × 19.1 mm (V) 100,000 e− 10 mV/e− Quantum Efficiency (450, 550, 650 mm) Readout Noise (10 MHz) Dark Current (Accumulation Mode) 40%, 52%, 65% 15 e− rms < 10 pA/cm2 Dark Current Doubling Rate 6°C Dynamic Range (Saturation Signal/Dark Noise) 76 dB Maximum Date Rate 10 MHz Package CERDIP Package (Sidebrazed) Cover Glass Clear or AR Coated, 2 Sides NOTE: Parameters above are specified at T = 25°C unless otherwise noted. www.onsemi.com Figure 1. KAF−6303 Full Frame CCD Image Sensor Features • True Two Phase Full Frame Architecture • TRUESENSE Transparent Gate Electrode for High Sensitivity • 100% Fill Factor • Low Dark Current Applications • Medical Imaging • Scientific Imaging ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 2 1 Publication Order Number: KAF−6303/D KAF−6303 ORDERING INFORMATION Table 2. ORDERING INFORMATION − KAF−6303 IMAGE SENSOR Part Number Description KAF−6303−AAA−CD−B2 Monochrome, No Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass with AR Coating (Both Sides), Grade 2 KAF−6303−AAA−CD−AE Monochrome, No Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass with AR Coating (Both Sides), Engineering Sample KAF−6303−AAA−CP−B2 Monochrome, No Microlens, CERDIP Package (Sidebrazed), Taped Clear Cover Glass (No Coatings), Grade 2 KAF−6303−AAA−CP−AE Monochrome, No Microlens, CERDIP Package (Sidebrazed), Taped Clear Cover Glass (No Coatings), Engineering Sample Marking Code KAF−6303−AAA Serial Number Table 3. ORDERING INFORMATION − EVALUATION SUPPORT Part Number KAF−6303−12−5−A−EVK Evaluation Board (Complete Kit) Description See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at www.onsemi.com. www.onsemi.com 2 DEVICE DESCRIPTION Architecture KAF−6303 KAF−6303 Usable Active Image Area 3072 (H) × 2048 (V) 9 × 9 mm Pixels 3:2 Aspcet Ratio 4 Dark Lines fV1 fV2 GUARD VRD fR VDD VOUT VSS Sub VOG ÉÉ 6 Dark 10 Inactive 3072 Active Pixels/Line Figure 2. Block Diagram ÉÉ 10 Dark 2 Inactive 4 Dark Lines fH1 fH2 The sensor consists of 3,088 parallel (vertical) CCD shift registers each 2,056 elements long. These registers act as both the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the sensor. The elements of these registers are arranged into a 3,072 × 2,048 photosensitive array surrounded by a light shielded dark reference of 16 columns and 8 rows. The parallel (vertical) CCD registers transfer the image one line at a time into a single 3,100 element (horizontal) CCD shift register. The horizontal register transfers the charge to a single output amplifier. The output amplifier is a two-stage source follower that converts the photo-generated charge to a voltage for each pixel. Dark Reference Pixels Surrounding the peripheral of the device is a border of light shielded pixels. This includes 6 leading and 10 trailing pixels on every line excluding dummy pixels. There are also 4 full dark lines at the start of every frame and 4 full dark lines at the end of each frame. Under normal circumstances, these pixels do not respond to light. However, dark reference pixels in close proximity to an active pixel, or the outer bounds of the chip (including the first two lines out), can scavenge signal depending on light intensity and wavelength and therefore will not represent the true dark signal. Dummy Pixels Within the horizontal shift register are 10 leading and 2 trailing additional shift phases that are not associated with a column of pixels from the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond to light. A few leading dummy pixels may scavenge false signal depending on operating.


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