1SS385FV

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Characteristic Symbol Rating Unit 0.13±0.05 Maximum (peak) reverse voltage VRM 15 V 0.5±0.05 Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10 ms) Power dissipation Junction temperature IO IFSM P Tj 100 * 1* 150** 125 mA A mW °C VESM 1. ANODE 1 2. ANODE 2 3. CATHODE Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 1-1Q1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 ** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) ...