NPT2018

NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 12.5W GaN HEMT Product Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.5 GHz): VDS = 48V, IDQ = 75mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 12.5W  Drain Efficiency at POUT = 12.5W - VDS Drain Voltage -  Ruggedness: Output Mismatch, all phase angles Typ Max Units 17.5 - dB 41.8 - dBm 60 - % 16.5 - dB 55 - % 48 - V VSWR = 10:1, No Device Damage Preliminary Datasheet Page 1 NDS-042 Rev. 2, 020314 NPT2018 Preliminary DC Specifications: TC = 25°C Symbol Parameter Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) On Characteristics VT VGSQ RON ID, MAX Gate Threshold Voltage (VDS=48V, ID=3mA...