NPT2021

NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2.5 GHz  48 V Operation  16.5 dB Gain at 2.5 GHz  55 % Drain Efficiency at 2.5 GHz  100 % RF Tested  TO-272 Package  RoHS* Compliant and 260°C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Functional Schematic 2 1 3 Rev. V1 Ordering Information Part Number NPT2021 NPT2021-SMBPPR Package Bulk Quantity Sample Board Pin Configuration Pin No. Pin Name 1 RFIN / VG 2 RFOUT / VD 3 Pad1 Function RF Input / Gate RF Output / Drain Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for add...