HEMT D-Mode Amplifier
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W
Features
• GaN on Si HEMT D-Mode Amplifier • Suitable ...
Description
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W
Features
GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain @ 900 MHz 60% Drain Efficiency @ 900 MHz 100% RF Tested TO-272 Package RoHS* Compliant and 260°C Reflow Compatible
Description
The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange.
The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology.
Functional Schematic
2 1
3
NPT2022
Rev. V3
Ordering Information
Part Number NPT2022
NPT2022-SMB1 NPT2022-TR0250
Package Bulk Quantity Sample Board Tape & Reel
Pin Configuration
1
RFIN / VG
RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Pad1
Ground / Source
1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 1
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