Document
MJ15001 (NPN), MJ15002 (PNP)
Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC IB IE PD
140 Vdc 140 Vdc
5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.14 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for v 10 secs
Symbol RqJC TL
Max 0.875 265
Unit °C/W
°C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
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20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 250 WATTS
SCHEMATIC
PNP CASE 3
NPN CASE 3
1 BASE
EMITTER 2
1 BASE
EMITTER 2
12
3 TO−204AA (TO−3) CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500xG AYYWW MEX
MJ1500x = Device Code
x = 1 or 2
G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device MJ15001G
MJ15002G
Package
TO−204AA (Pb−Free)
TO−204AA (Pb−Free)
Shipping 100 Units/Tray
100 Units/Tray
Publication Order Number: MJ15001/D
MJ15001 (NPN), MJ15002 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1)
(IC, = 200 mAdc, IB = 0) Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCE = 140 Vdc, IB = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1 s (non−repetitive)) (VCE = 100 Vdc, t = 1 s (non−repetitive)) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 2 Vdc) Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.4 Adc) Base−Emitter On Voltage (IC = 4 Adc, VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
Symbol VCEO(sus)
ICEX ICEO IEBO
IS/b
hFE VCE(sat) VBE(on)
fT Cob
Min Max Unit
140 − Vdc
− 100 mAdc − 2.0 mAdc − 250 mAdc − 100 mAdc
Adc 5.0 − 0.5 −
25 150
−
− 1.0 Vdc
− 2.0 Vdc
2.0 − MHz
−
1000
pF
IC, COLLECTOR CURRENT (AMP)
200 TC = 25°C
10 7 5 3 2
1
TJ = 200°C BONDING WIRE LIMITED
0.7 THERMAL LIMITATION (SINGLE PULSE)
0.5 SECOND BREAKDOWN LIMITED
0.3 CURVES APPLY BELOW RATED VCEO
0.2 23
5 7 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
200
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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C, CAPACITANCE (pF)
MJ15001 (NPN), MJ15002 (PNP)
1000 700 500
300 200
100 70 50 30 20
10 1.5 2 3
TYPICAL CHARACTERISTICS
10
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Cib TJ = 25°C Cib
Cob
MJ15001 (NPN) MJ15002 (PNP)
Cob
9 8 7 6 5 4 3 2 1
MJ15002 (PNP)
TJ = 25°C VCE = 10 V ftest = 0.5 MHz
MJ15001 (NPN)
5 7 10
20 30 50 70 100 150
VR, REVERSE VOLTAGE (VOLTS) Figure 2. Capacitances
0 0.1 0.2 0.3 0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMP) Figure 3. Current−Gain — Bandwidth Product
MJ15001
200 100 TJ = 100°C 70 25°C 50
30 20
VCE = 2 Vdc
MJ15002 200
100 TJ = 100°C 70 25°C 50
30 20
VCE = 2 Vdc
hFE, DC CURRENT GAIN
10 7 5
3 2 0.2 0.3
10
7 5
3
0.5 0.7 1
2 3 5 7 10
20
2 0.2 0.3 0.5 0.7 1
2 3 57
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. DC Current Gain
10
20
hFE, DC CURRENT GAIN
V, VOLTAGE (VOLTS)
MJ15001 2.