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MJ15002G Dataheets PDF



Part Number MJ15002G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Power Transistors
Datasheet MJ15002G DatasheetMJ15002G Datasheet (PDF)

MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuou.

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MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB IE PD 140 Vdc 140 Vdc 5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.14 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +200 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for v 10 secs Symbol RqJC TL Max 0.875 265 Unit °C/W °C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 6 1 http://onsemi.com 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS, 250 WATTS SCHEMATIC PNP CASE 3 NPN CASE 3 1 BASE EMITTER 2 1 BASE EMITTER 2 12 3 TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ1500xG AYYWW MEX MJ1500x = Device Code x = 1 or 2 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin ORDERING INFORMATION Device MJ15001G MJ15002G Package TO−204AA (Pb−Free) TO−204AA (Pb−Free) Shipping 100 Units/Tray 100 Units/Tray Publication Order Number: MJ15001/D MJ15001 (NPN), MJ15002 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC, = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCE = 140 Vdc, IB = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1 s (non−repetitive)) (VCE = 100 Vdc, t = 1 s (non−repetitive)) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 2 Vdc) Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.4 Adc) Base−Emitter On Voltage (IC = 4 Adc, VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. Symbol VCEO(sus) ICEX ICEO IEBO IS/b hFE VCE(sat) VBE(on) fT Cob Min Max Unit 140 − Vdc − 100 mAdc − 2.0 mAdc − 250 mAdc − 100 mAdc Adc 5.0 − 0.5 − 25 150 − − 1.0 Vdc − 2.0 Vdc 2.0 − MHz − 1000 pF IC, COLLECTOR CURRENT (AMP) 200 TC = 25°C 10 7 5 3 2 1 TJ = 200°C BONDING WIRE LIMITED 0.7 THERMAL LIMITATION (SINGLE PULSE) 0.5 SECOND BREAKDOWN LIMITED 0.3 CURVES APPLY BELOW RATED VCEO 0.2 23 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active−Region Safe Operating Area 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ (pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 2 C, CAPACITANCE (pF) MJ15001 (NPN), MJ15002 (PNP) 1000 700 500 300 200 100 70 50 30 20 10 1.5 2 3 TYPICAL CHARACTERISTICS 10 fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Cib TJ = 25°C Cib Cob MJ15001 (NPN) MJ15002 (PNP) Cob 9 8 7 6 5 4 3 2 1 MJ15002 (PNP) TJ = 25°C VCE = 10 V ftest = 0.5 MHz MJ15001 (NPN) 5 7 10 20 30 50 70 100 150 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Capacitances 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Current−Gain — Bandwidth Product MJ15001 200 100 TJ = 100°C 70 25°C 50 30 20 VCE = 2 Vdc MJ15002 200 100 TJ = 100°C 70 25°C 50 30 20 VCE = 2 Vdc hFE, DC CURRENT GAIN 10 7 5 3 2 0.2 0.3 10 7 5 3 0.5 0.7 1 2 3 5 7 10 20 2 0.2 0.3 0.5 0.7 1 2 3 57 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. DC Current Gain 10 20 hFE, DC CURRENT GAIN V, VOLTAGE (VOLTS) MJ15001 2.


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